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Authors
Affiliations
1 Department of Physics and Electronics, University of Jammu, Jammu-180006, IN
Source
Invertis Journals of Science & Technology, Vol 8, No 1 (2015), Pagination: 40-47
Abstract
In this paper we have compared 1 nm diameter Indium Arsenide and Indium Antimonide based nanowire MOSFET with 1 nm diameter Silicon based nanowire MOSFET (Si-NWMOSFET), both gives excellent on and off characteristics than Si-NWMOSFET. The device metrics considered at the nanometer scale are Subthreshold swing (S), Drain Induced Barrier Lowering (DIBL), On and Off current, Carrier Injection Velocity (vinj) etc. The results advise us that InSb and InAs channeled Nanowire MOSFET has the highest Ion and lowest Ioff values. Besides, InSb NWMOSFET has the highest values for Ion/I off ratio, vinj, transconductance (gm) and improved short channel effect (S = 59.82 and DIBL = 0.84 both values is very closed to ideal condition). More results such as effect of quantum capacitance vs. Vgs, Ids vs. Vgs-Vds, gm/Id vs. Vgs, average velocity vs. Vg, DIBL and Subthreshold Slope (SS) for three different NWMOSFETs has been investigated. Results obtained suggest that InSb and InAs nanowire channels appear to be applicable for high performance logic and even low operating power requirements.
Keywords
Indium Antimonide, Indium Arsenide, Nanowire MOSFET, DIBL, Subthreshold Slope, Transconductance.
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